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HY5V66ELF6P-P from HYNIX

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HY5V66ELF6P-P

Manufacturer: HYNIX

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

Partnumber Manufacturer Quantity Availability
HY5V66ELF6P-P,HY5V66ELF6PP HYNIX 3698 In Stock

Description and Introduction

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O The **HY5V66ELF6P-P** is a high-performance **512Mb (64M x 8-bit) DDR SDRAM** electronic component designed for applications requiring fast data transfer rates and reliable memory performance. Operating at a **166MHz clock frequency (333Mbps/pin)**, it supports **Double Data Rate (DDR) technology**, enabling efficient data processing in computing, networking, and embedded systems.  

This component features a **2.5V ± 0.2V power supply**, ensuring low power consumption while maintaining high-speed operation. Its **synchronous interface** allows precise timing control, making it suitable for systems that demand strict synchronization. The **LVTTL-compatible inputs and outputs** enhance compatibility with various digital circuits.  

The **HY5V66ELF6P-P** comes in a **66-pin TSOP-II package**, providing a compact footprint for space-constrained designs. With **auto-refresh and self-refresh modes**, it optimizes power efficiency in standby operations. Additionally, it supports **burst lengths of 2, 4, or 8**, offering flexibility in data access patterns.  

Engineers and designers often integrate this DDR SDRAM into **servers, routers, industrial automation, and consumer electronics**, where high bandwidth and low latency are critical. Its robust design ensures stable performance across a wide range of operating temperatures, making it a dependable choice for demanding applications.

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