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HY5V26CLF-H from SAMSUNG

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HY5V26CLF-H

Manufacturer: SAMSUNG, HYNIX

4 Banks x 2M x 16bits Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY5V26CLF-H,HY5V26CLFH SAMSUNG, HYNIX 240 In Stock

Description and Introduction

4 Banks x 2M x 16bits Synchronous DRAM The HY5V26CLF-H is a 256Mb DDR SDRAM manufactured by HYNIX. Here are its key specifications:  

- **Density**: 256Mb (32M x 8)  
- **Organization**: 4 Banks  
- **Interface**: Double Data Rate (DDR)  
- **Clock Frequency**: 166MHz (DDR333)  
- **Data Rate**: 333Mbps/pin  
- **Operating Voltage**: 2.5V ± 0.2V  
- **Refresh Cycles**: 4096 (64ms refresh interval)  
- **CAS Latency (CL)**: 2.5  
- **Package**: 66-pin TSOP-II  
- **Operating Temperature**: Commercial (0°C to +70°C)  
- **Burst Length**: 2, 4, 8 (programmable)  
- **I/O Type**: SSTL_2  

This information is based on the manufacturer's datasheet for the HY5V26CLF-H.

Application Scenarios & Design Considerations

4 Banks x 2M x 16bits Synchronous DRAM

Alternative Part Number

  • IS42S32200L-7TL --: Pin-compatible 64Mb SDR SDRAM with similar organization and speed grade, widely used as a drop-in replacement for Samsung SDRAM parts.
  • MT48LC16M16A2P-7E --: Industry-standard 256Mb SDR SDRAM in the same TSOP package family, commonly cross-referenced for Samsung SDRAM designs.
  • W9825G6JH-6 --: Cost-effective 256Mb SDR SDRAM with compatible interface and timing, suitable as a functional substitute where exact density matching is flexible.
  • W9825G6KH-6 --: Cost-effective 256Mb SDR SDRAM with compatible interface and package, suitable as a second-source alternative for legacy Hynix memory.

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