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HY5S5B6ELF-SE from HYNIX

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HY5S5B6ELF-SE

Manufacturer: HYNIX, HY

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Partnumber Manufacturer Quantity Availability
HY5S5B6ELF-SE,HY5S5B6ELFSE HYNIX, HY 13104 In Stock

Description and Introduction

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O The **HY5S5B6ELF-SE** is a high-performance **512Mb (32Mx16) DDR SDRAM** electronic component designed for applications requiring fast data transfer and low power consumption. Built with advanced semiconductor technology, this memory module operates at a **200MHz clock frequency**, delivering efficient performance for computing, networking, and embedded systems.  

Featuring a **double data rate (DDR) architecture**, the HY5S5B6ELF-SE enables data transfer on both the rising and falling edges of the clock signal, effectively doubling bandwidth compared to conventional SDRAM. It supports a **2.5V operating voltage**, ensuring energy efficiency while maintaining stability in high-speed operations.  

The component is housed in a **54-pin TSOP-II package**, making it suitable for space-constrained designs. Its **CAS latency of 2.5** ensures quick response times, while **auto-refresh and self-refresh modes** enhance power management in standby conditions.  

Engineered for reliability, the HY5S5B6ELF-SE meets industry standards for thermal and electrical performance, making it ideal for industrial, automotive, and consumer electronics applications. Whether used in servers, routers, or multimedia devices, this DDR SDRAM provides a balance of speed, power efficiency, and durability.  

For detailed specifications, consult the official datasheet to ensure compatibility with your system requirements.

Application Scenarios & Design Considerations

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

Alternative Part Number

  • K4B4G1646E-BYK0 --: Samsung 4Gb DDR3 SDRAM in the same class as the Hynix 5Gb-equivalent DDR3 device, widely available and pin-compatible in most designs.
  • MT41K256M16TW-107 --: Micron 4Gb DDR3L SDRAM offering comparable density, speed grade, and package options, a common drop-in substitute for Hynix DDR3 parts.
  • W631GU6NB-12 --: Winbond 4Gb DDR3L SDRAM with similar organization and timing, suitable as a lower-cost second-source alternative.
  • MT48LC4M16A2P-6A --: 64Mb SDR SDRAM in TSOP-54 with comparable density and speed grade, widely available and pin-compatible in most designs.
  • IS42S16400J-7TL --: 64Mb SDR SDRAM offering similar organization and timing, a common drop-in substitute for Hynix SDRAM parts.
  • W9864G6KH-6 --: 64Mb SDR SDRAM with matching interface and package options, suitable as a functional replacement.

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