HY57V658020BTC-10P

Partnumber	Manufacturer	Quantity	Availability
HY57V658020BTC-10P Manufacturer: HY 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V658020BTC-10P,HY57V658020BTC10P	HY	960	In Stock
Description and Introduction 4 Banks x 2M x 8Bit Synchronous DRAM The HY57V658020BTC-10P is a synchronous DRAM (SDRAM) manufactured by Hynix (now SK Hynix). Below are its key specifications: 1. Type: 64Mbit (4M x 16) SDRAM 2. Organization: 4 banks x 4,194,304 words x 16 bits 3. Voltage: 3.3V ± 0.3V 4. Speed: 10ns (100MHz operation) 5. Interface: LVTTL 6. Refresh: 4,096 refresh cycles / 64ms 7. CAS Latency: 2 or 3 (programmable) 8. Burst Length: 1, 2, 4, 8, or full page (programmable) 9. Package: 54-pin TSOP-II (400mil width) 10. Operating Temperature: Commercial (0°C to +70°C) This SDRAM is designed for high-speed data transfer applications.
Application Scenarios & Design Considerations 4 Banks x 2M x 8Bit Synchronous DRAM
Alternative Part Number MT48LC4M16A2P-7E --: 64Mb SDR SDRAM in 4M x16 organization, same TSOP package and 3.3V interface, widely available and pin-compatible replacement for the HY57V658020. IS42S16400J-7TL --: 64Mb SDR SDRAM organized as 4M x16 with 3.3V supply and TSOP II package, a direct functional equivalent commonly used to replace Hynix SDRAM parts. W9864G6JH-6 --: 64Mb SDR SDRAM 4M x16 device in TSOP package with 3.3V operation, offering comparable timing and pinout as an alternative source for the HY57V658020.

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