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HY57V651620BLTC-10S from HYUNDAI

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HY57V651620BLTC-10S

Manufacturer: HYUNDAI

4 Banks x 1M x 16Bit Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY57V651620BLTC-10S,HY57V651620BLTC10S HYUNDAI 21 In Stock

Description and Introduction

4 Banks x 1M x 16Bit Synchronous DRAM The HY57V651620BLTC-10S is a synchronous DRAM (SDRAM) manufactured by Hyundai (now SK Hynix). Here are its key specifications:

- **Type**: 64Mb (4M x 16) Synchronous DRAM  
- **Organization**: 4 banks, 4,194,304 words × 16 bits  
- **Voltage**: 3.3V ± 0.3V  
- **Speed**: 10ns (100MHz)  
- **Interface**: LVTTL  
- **Refresh**: 4,096 refresh cycles / 64ms  
- **CAS Latency**: 2 or 3 (programmable)  
- **Package**: 54-pin TSOP II  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Features**: Auto refresh, self refresh, burst read/write, programmable burst length (1, 2, 4, 8, full page)  

This part is commonly used in networking, telecommunications, and embedded systems.

Application Scenarios & Design Considerations

4 Banks x 1M x 16Bit Synchronous DRAM

Alternative Part Number

  • MT48LC4M16A2P-7E --: 64Mb SDR SDRAM in 4M x 16 organization, same TSOP package and 3.3V interface, widely available and pin-compatible replacement for the Hyundai part.
  • IS42S16400J-7TL --: 64Mb SDR SDRAM organized as 4M x 16 with 3.3V supply and TSOP II package, a direct functional equivalent commonly used to replace HY57V651620 series devices.
  • W9864G6JH-6 --: 64Mb SDR SDRAM in 4M x 16 configuration with 3.3V operation and TSOP package, offering comparable speed grades and timing as a drop-in alternative.

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