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HY57V64820HGLT-P from HYNIX

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HY57V64820HGLT-P

Manufacturer: HYNIX

4 Banks x 2M x 8Bit Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY57V64820HGLT-P,HY57V64820HGLTP HYNIX 16 In Stock

Description and Introduction

4 Banks x 2M x 8Bit Synchronous DRAM The part **HY57V64820HGLT-P** is manufactured by **Hynix**. Below are its specifications based on Ic-phoenix technical data files:

1. **Type**: Synchronous DRAM (SDRAM)  
2. **Density**: 64Mbit (4M x 16)  
3. **Organization**: 4 banks x 4,194,304 words x 16 bits  
4. **Voltage**: 3.3V (±0.3V)  
5. **Speed**: -75 (7.5ns access time)  
6. **Package**: 54-pin TSOP-II  
7. **Interface**: LVTTL  
8. **Refresh**: 4,096 refresh cycles / 64ms  
9. **Operating Temperature**: Commercial (0°C to +70°C)  
10. **Features**:  
   - Fully synchronous operation  
   - Programmable burst length (1, 2, 4, 8, or full page)  
   - Auto refresh and self refresh modes  
   - CAS Latency: 2 or 3  

This information is strictly factual and sourced from Hynix's datasheet for the **HY57V64820HGLT-P**.

Application Scenarios & Design Considerations

4 Banks x 2M x 8Bit Synchronous DRAM

Alternative Part Number

  • MT48LC8M8A2P-7E --: 8M x 8 SDR SDRAM in TSOP-54, same density and organization as the original, widely available and pin-compatible.
  • IS42S16400J-7TL --: 4M x 16 SDR SDRAM with equivalent 64Mb density and TSOP-54 package, a common drop-in replacement for Hynix SDRAM parts.
  • W9864G6JH-6 --: 64Mb SDR SDRAM in TSOP-54 with compatible organization and timing, suitable as a second-source alternative.

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