HY57V64820HG

Partnumber	Manufacturer	Quantity	Availability
HY57V64820HG Manufacturer: HY 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V64820HG	HY	125	In Stock
Description and Introduction 4 Banks x 2M x 8Bit Synchronous DRAM The HY57V64820HG is a 64Mb (4Mx16) SDRAM manufactured by SK Hynix. Here are its key specifications: - Organization: 4M words × 16 bits - Voltage: 3.3V ± 0.3V - Speed Grades: -6 (166MHz), -7 (143MHz), -8 (125MHz) - Refresh: 4096 refresh cycles / 64ms - CAS Latency: 2, 3 programmable - Burst Length: 1, 2, 4, 8, full page - Interface: LVTTL - Package: 54-pin TSOP-II (400mil width) - Operating Temperature: Commercial (0°C to 70°C), Industrial (-40°C to 85°C) This SDRAM is commonly used in networking, telecommunications, and embedded systems.
Application Scenarios & Design Considerations 4 Banks x 2M x 8Bit Synchronous DRAM
Alternative Part Number MT48LC8M16A2P-75 --: Same 128Mb SDR SDRAM density in 8M x 16 organization with 3.3V LVTTL interface; widely available and pin-compatible in function, making it a strong drop-in alternative. IS42S16800E-7TL --: 128Mb SDR SDRAM organized as 8M x 16 with 3.3V supply and similar timing; ISSI is a common second source for Hynix SDRAM parts and offers good availability. W9864G6JH-6 --: 64Mb SDR SDRAM in 4M x 16 organization; lower density but electrically and functionally compatible for designs that do not require the full 128Mb, providing a cost-effective fallback option.

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