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HY57V643220CT-55 from HYNIX

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HY57V643220CT-55

Manufacturer: HYNIX, HUNIX

4 Banks x 512K x 32Bit Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY57V643220CT-55,HY57V643220CT55 HYNIX, HUNIX 113 In Stock

Description and Introduction

4 Banks x 512K x 32Bit Synchronous DRAM The HY57V643220CT-55 is a 64Mbit (4M x 16) Synchronous DRAM (SDRAM) manufactured by HYNIX. Here are its key specifications:

- **Organization**: 4M words × 16 bits  
- **Voltage Supply**: 3.3V ± 0.3V  
- **Speed**: 55ns (5.5ns clock access time)  
- **Operating Frequency**: Up to 166MHz  
- **Interface**: LVTTL  
- **Refresh**: 4096 refresh cycles / 64ms  
- **Burst Length**: 1, 2, 4, 8, or full page  
- **CAS Latency**: 2 or 3 programmable  
- **Package**: 54-pin TSOP II  
- **Operating Temperature**: Commercial (0°C to 70°C) or Industrial (-40°C to 85°C)  
- **Features**: Auto refresh, self refresh, programmable burst length, and sequential/interleave burst modes.  

This SDRAM is commonly used in applications requiring high-speed memory, such as networking, telecommunications, and embedded systems.

Application Scenarios & Design Considerations

4 Banks x 512K x 32Bit Synchronous DRAM

Alternative Part Number

  • IS42S32200E-6TL --: Pin-compatible 64Mb SDR SDRAM organized as 2M x 32, same 3.3V interface and similar speed grade, widely available as a drop-in replacement.
  • MT48LC2M32B2P-6A --: 64Mb SDR SDRAM in 2M x 32 organization with 3.3V supply and comparable 166MHz speed, a well-established alternative to the Hynix part.
  • W9825G6JH-6 --: 64Mb SDR SDRAM configured as 2M x 32 with 3.3V operation and similar timing, offering a cost-effective second-source option.

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