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HY57V641620HGT-HI from HYNIX

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HY57V641620HGT-HI

Manufacturer: HYNIX

4 Banks x 1M x 16Bit Synchronous DRAM

Partnumber Manufacturer Quantity Availability
HY57V641620HGT-HI,HY57V641620HGTHI HYNIX 295 In Stock

Description and Introduction

4 Banks x 1M x 16Bit Synchronous DRAM The HY57V641620HGT-HI is a 64Mbit (4M x 16) Synchronous DRAM (SDRAM) manufactured by HYNIX. Below are its key specifications:

- **Organization**: 4M words × 16 bits  
- **Voltage Supply**: 3.3V ± 0.3V  
- **Speed**: 7.5ns (133MHz @ CL=3)  
- **Package**: 54-pin TSOP II  
- **Refresh**: 4,096 refresh cycles / 64ms  
- **Burst Length**: 1, 2, 4, 8, or full page  
- **CAS Latency**: Programmable (2, 3)  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Interface**: LVTTL  
- **Data Rate**: Single Data Rate (SDR)  
- **Features**: Auto refresh and self refresh, programmable burst mode  

This SDRAM is commonly used in applications requiring high-speed memory access, such as networking, telecommunications, and embedded systems.

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