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HY57V641620ET-6 from HYNIX

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HY57V641620ET-6

Manufacturer: HYNIX, HY

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
Partnumber Manufacturer Quantity Availability
HY57V641620ET-6,HY57V641620ET6 HYNIX, HY 1078 In Stock

Description and Introduction

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O The HY57V641620ET-6 is a 64Mbit (4M x 16) Synchronous DRAM (SDRAM) manufactured by HYNIX. Here are its key specifications:  

- **Organization**: 4M words × 16 bits  
- **Voltage Supply**: 3.3V ± 0.3V  
- **Operating Frequency**: Up to 166MHz (6ns clock cycle time)  
- **Access Time**: 5.4ns (CL=3 at 166MHz)  
- **Refresh Cycles**: 4096 refresh cycles / 64ms  
- **CAS Latency (CL)**: Programmable (2, 3)  
- **Burst Length**: 1, 2, 4, 8, or full page  
- **Interface**: LVTTL compatible  
- **Package**: 54-pin TSOP-II (400mil width)  
- **Operating Temperature**: Commercial (0°C to 70°C) or Industrial (-40°C to 85°C)  

This SDRAM is commonly used in applications requiring high-speed data transfer, such as networking, telecommunications, and computing systems.

Application Scenarios & Design Considerations

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

Alternative Part Number

  • IS42S16400J-6TL --: 64Mbit SDR SDRAM organized as 4M x 16, 6ns speed grade, pin-compatible with the HY57V641620ET-6 and widely available from a different manufacturer.
  • MT48LC4M16A2P-6A --: 64Mbit SDR SDRAM in 4M x 16 organization with 6ns access time, functionally equivalent and a common drop-in replacement for the Hynix part.
  • W9864G6JH-6 --: 64Mbit SDR SDRAM, 4M x 16 configuration, 6ns speed grade, suitable alternative with matching interface and timing characteristics.

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