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HY57V561620CT-7 from HYNIX

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HY57V561620CT-7

Manufacturer: HYNIX, HY

4 Banks x 4M x 16Bit Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY57V561620CT-7,HY57V561620CT7 HYNIX, HY 6132 In Stock

Description and Introduction

4 Banks x 4M x 16Bit Synchronous DRAM The HY57V561620CT-7 is a synchronous DRAM (SDRAM) manufactured by Hynix (now SK Hynix). Here are its key specifications:

1. **Density**: 256Mb (4 banks × 16Mb × 4)
2. **Organization**: 4M words × 16 bits × 4 banks
3. **Voltage**: 3.3V ± 0.3V
4. **Speed**: 7ns (143MHz clock frequency)
5. **Interface**: LVTTL-compatible
6. **Burst Length**: 1, 2, 4, 8, or full page
7. **CAS Latency**: 2 or 3 (programmable)
8. **Refresh**: 4096 refresh cycles every 64ms (auto-refresh or self-refresh)
9. **Package**: 54-pin TSOP-II
10. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) options.

These specifications are based on the datasheet for the HY57V561620CT-7 SDRAM.

Application Scenarios & Design Considerations

4 Banks x 4M x 16Bit Synchronous DRAM

Alternative Part Number

  • MT48LC4M16A2P-7E --: Same 64Mb SDR SDRAM density in a 4M x16 organization with 7ns speed grade, widely available and pin-compatible replacement for the HY57V561620CT-7.
  • IS42S16400F-7TL --: 64Mb SDR SDRAM organized as 4M x16 with 7ns access time, drop-in compatible with the original Hynix part and commonly used as a second source.
  • W9864G6JH-7 --: 64Mb SDR SDRAM in 4M x16 configuration with 7ns speed grade, functionally equivalent alternative suitable for the same memory socket.
  • MT48LC16M16A2P-7E --: 16M x 16 SDR SDRAM in TSOP-54, same 256Mb density and 7ns speed grade, widely available and pin-compatible with the HY57V561620CT-7.
  • IS42S16160D-7TL --: 256Mb SDR SDRAM organized 16M x 16 with 7ns access time in TSOP-54 package, a direct functional drop-in replacement.
  • W9825G6JH-6 --: 256Mb SDR SDRAM 16M x 16 in TSOP-54; the 6ns grade is faster than the original 7ns and can substitute where timing margin allows.

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