HY57V281620AT-K

Partnumber	Manufacturer	Quantity	Availability
HY57V281620AT-K Manufacturer: HY 4 Banks x 2M x 16bits Synchronous DRAM
HY57V281620AT-K,HY57V281620ATK	HY	50	In Stock
Description and Introduction 4 Banks x 2M x 16bits Synchronous DRAM The HY57V281620AT-K is a 128Mb (16M x 8-bit) Synchronous DRAM (SDRAM) manufactured by SK Hynix. Here are its key specifications: - Organization: 16M words × 8 bits - Density: 128Mb - Voltage: 3.3V ± 0.3V - Speed: 6ns (166MHz) or 7.5ns (133MHz) - Refresh: 4,096 refresh cycles / 64ms - Interface: LVTTL - Package: 54-pin TSOP-II - Burst Length: 1, 2, 4, 8, or full page - CAS Latency: 2 or 3 - Operating Temperature: Commercial (0°C to 70°C) or Industrial (-40°C to 85°C) This SDRAM is commonly used in networking, telecommunications, and embedded systems.
Application Scenarios & Design Considerations 4 Banks x 2M x 16bits Synchronous DRAM
Alternative Part Number IS42S16800F-7TL --: 16Mbit SDR SDRAM organized as 2M x 8 x 4 banks, same 54-pin TSOP II package and 3.3V interface, widely available drop-in replacement for HY57V281620AT-K. MT48LC16M16A2P-7E --: 16Mbit SDR SDRAM in 2M x 8 x 4 bank configuration with compatible 3.3V timing and 54-pin TSOP package, a well-established alternative from a major DRAM vendor. W9825G6JH-6 --: 16Mbit SDR SDRAM with 4 banks x 2M x 8 organization, 3.3V operation and TSOP II footprint, offering similar speed grades and reliable second-source availability.

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HY57V281620AT-K from HY