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HY57V281620AT-6 from HY

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HY57V281620AT-6

Manufacturer: HY, HYNIX

4 Banks x 2M x 16bits Synchronous DRAM
Partnumber Manufacturer Quantity Availability
HY57V281620AT-6,HY57V281620AT6 HY, HYNIX 585 In Stock

Description and Introduction

4 Banks x 2M x 16bits Synchronous DRAM The HY57V281620AT-6 is a 128Mbit (4Mx32) Synchronous DRAM (SDRAM) manufactured by HYNIX. Below are its key specifications:

- **Organization**: 4M words × 32 bits  
- **Density**: 128Mbit  
- **Voltage Supply**: 3.3V ± 0.3V  
- **Speed**: 166MHz (6ns access time)  
- **Interface**: Fully synchronous with all signals referenced to a positive clock edge  
- **Burst Length**: 1, 2, 4, 8, or full page  
- **CAS Latency**: 2 or 3 programmable  
- **Refresh Cycles**: 4096 refresh cycles / 64ms  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package**: 54-pin TSOP-II (400mil width)  
- **Features**: Auto refresh and self refresh modes, programmable burst length, and sequential or interleaved burst mode.  

This SDRAM is commonly used in applications requiring high-speed data transfer, such as networking equipment, graphics cards, and embedded systems.

Application Scenarios & Design Considerations

4 Banks x 2M x 16bits Synchronous DRAM

Alternative Part Number

  • MT48LC8M16A2P-6A --: 128Mb SDR SDRAM organized as 8M x 16, 3.3V, 166MHz speed grade comparable to -6, widely available and pin-compatible in function.
  • IS42S16800F-6TL --: 128Mb synchronous DRAM in 8M x 16 configuration with 166MHz speed, direct functional replacement for the HY57V281620AT-6.
  • W9825G6KH-6 --: 256Mb SDR SDRAM organized as 4M x 16 x 4 banks, 166MHz, commonly used as a drop-in upgrade for 128Mb 16-bit SDR SDRAM parts.

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