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HY29F040AT-90 from HY

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HY29F040AT-90

Manufacturer: HY, HYNIX

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
Partnumber Manufacturer Quantity Availability
HY29F040AT-90,HY29F040AT90 HY, HYNIX 6617 In Stock

Description and Introduction

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory The HY29F040AT-90 is a 4Mbit (512K x 8) CMOS flash memory manufactured by HYNIX. Below are its key specifications:

- **Organization**: 512K x 8 bits  
- **Supply Voltage**: 5V ± 10%  
- **Access Time**: 90ns  
- **Operating Current**: 30mA (typical)  
- **Standby Current**: 100µA (typical)  
- **Sector Architecture**:  
  - Eight 64Kbyte sectors  
  - Uniform sector size  
- **Endurance**: 100,000 write/erase cycles per sector  
- **Data Retention**: 10 years  
- **Interface**: Parallel (x8)  
- **Package**: 32-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature Range**:  
  - Commercial (0°C to +70°C)  
  - Industrial (-40°C to +85°C)  

These specifications are based on the manufacturer's datasheet.

Application Scenarios & Design Considerations

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

Alternative Part Number

  • AM29F040B-90PC --: Same 4Mbit 5V flash memory with 90ns access time, pin-compatible and widely available as a direct functional substitute.
  • M29F040B-90K1 --: Equivalent 512Kx8 5V flash device with 90ns speed grade, compatible command set and pinout for drop-in replacement.
  • SST39SF040-70-4C-PH --: 4Mbit 5V parallel flash with faster 70ns access, pin-compatible in PLCC package and commonly used as an alternative to HY29F040.
  • SST39SF040-70-4C-PHE --: 4Mbit 5V parallel flash with compatible pinout and faster 70ns access, usable where timing is not critical and often easier to source.

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