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HY29F040AT-70 from HY

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HY29F040AT-70

Manufacturer: HY, HYNIX, HYUNDAI

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

Partnumber Manufacturer Quantity Availability
HY29F040AT-70,HY29F040AT70 HY, HYNIX, HYUNDAI 20248 In Stock

Description and Introduction

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory The HY29F040AT-70 is a 5V-only, 512K x 8-bit Flash Memory manufactured by HYNIX. Below are its key specifications:

1. **Memory Organization**: 512K x 8-bit  
2. **Supply Voltage**: 5V ± 10%  
3. **Access Time**: 70ns  
4. **Sector Architecture**:  
   - Eight 64K-byte sectors  
5. **Operating Current**:  
   - 30mA (typical active read current)  
   - 50mA (typical program/erase current)  
6. **Standby Current**: 1µA (typical)  
7. **Endurance**: 100,000 program/erase cycles per sector  
8. **Data Retention**: 10 years  
9. **Package**: 32-pin TSOP (Thin Small Outline Package)  
10. **Interface**: Parallel  
11. **Operating Temperature Range**:  
    - Commercial: 0°C to +70°C  
    - Industrial: -40°C to +85°C  
12. **Program/Erase Voltage**: 5V (no additional high voltage required)  

These specifications are based on the manufacturer's datasheet. For detailed electrical characteristics or timing diagrams, refer to the official documentation.

Application Scenarios & Design Considerations

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

Alternative Part Number

  • AM29F040B-70JC --: Same 4Mbit 5V flash memory with 70ns access time in a compatible 32-pin PLCC package, widely available and pin-compatible.
  • SST39SF040-70-4C-PHE --: 4Mbit 5V parallel flash with 70ns speed in a 32-pin PDIP/PLCC form factor, a common drop-in replacement for 29F040-class devices.
  • M29F040B-70K6 --: 4Mbit 5V flash memory with 70ns access time and compatible command set and pinout, suitable as a functional substitute.

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