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HY29DL163TT-90 from HUNIX

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HY29DL163TT-90

Manufacturer: HUNIX

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory
Partnumber Manufacturer Quantity Availability
HY29DL163TT-90,HY29DL163TT90 HUNIX 84 In Stock

Description and Introduction

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-90 is a flash memory device manufactured by Hynix (formerly Hyundai Electronics). Here are its key specifications:

1. **Memory Type**: 16M x 16-bit (32MB) CMOS Flash Memory  
2. **Technology**: NOR Flash  
3. **Supply Voltage**: 2.7V - 3.6V  
4. **Access Time**: 90ns  
5. **Operating Temperature Range**: -40°C to +85°C  
6. **Package**: 48-pin TSOP (Thin Small Outline Package)  
7. **Interface**: Parallel  
8. **Sector Architecture**: Uniform 16KB sectors  
9. **Endurance**: 100,000 program/erase cycles per sector  
10. **Data Retention**: 10 years minimum  

This device is commonly used in embedded systems, networking equipment, and other applications requiring non-volatile storage.

Application Scenarios & Design Considerations

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

Alternative Part Number

  • S29GL064N90TFI040 --: 64Mb 3V parallel NOR flash in TSOP-48 with 90ns access time, a widely available drop-in class replacement for the 16Mb HY29DL163T.
  • MX29LV160DBTI-70G --: 16Mb 3V bottom-boot parallel NOR flash in TSOP-48 with fast access time, functionally equivalent to the HY29DL163T series.
  • AM29LV160DB-90EI --: 16Mb 3V parallel NOR flash in TSOP-48 with 90ns speed, matching the original density, voltage and package.

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