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HY29DL163TT-70 from HY

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15.625ms

HY29DL163TT-70

Manufacturer: HY

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

Partnumber Manufacturer Quantity Availability
HY29DL163TT-70,HY29DL163TT70 HY 955 In Stock

Description and Introduction

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-70 is a 16M (2M x 8-bit / 1M x 16-bit) CMOS flash memory device manufactured by HY (Hynix). Key specifications include:  

- **Organization**:  
  - 2,097,152 words × 8 bits (x8 mode)  
  - 1,048,576 words × 16 bits (x16 mode)  

- **Supply Voltage**: 2.7V–3.6V  

- **Access Time**: 70 ns  

- **Operating Current**:  
  - Read: 20 mA (typical)  
  - Program/Erase: 30 mA (typical)  

- **Standby Current**: 1 µA (typical)  

- **Sector Architecture**:  
  - Sixteen 4K-word (8K-byte) sectors  
  - Eight 32K-word (64K-byte) sectors  
  - One 16K-word (32K-byte) sector  

- **Endurance**: 100,000 program/erase cycles per sector  

- **Data Retention**: 20 years  

- **Package**: 48-pin TSOP (Type I)  

- **Operating Temperature**: -40°C to +85°C  

- **Interface**: Supports both x8 and x16 configurations with a byte# (BYTE) pin for mode selection.  

This device is designed for high-performance, low-power applications requiring reliable non-volatile storage.

Partnumber Manufacturer Quantity Availability
HY29DL163TT-70,HY29DL163TT70 HYING. 179 In Stock

Description and Introduction

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-70 is a flash memory chip manufactured by HYING. Here are its key specifications:  

- **Memory Type**: NOR Flash  
- **Density**: 16Mbit (2M x 8-bit or 1M x 16-bit)  
- **Supply Voltage**: 2.7V - 3.6V  
- **Access Time**: 70ns  
- **Operating Temperature**: Commercial (0°C to +70°C)  
- **Package**: 48-pin TSOP  
- **Interface**: Parallel  
- **Sector Architecture**: Uniform 64KB sectors  
- **Endurance**: 100,000 program/erase cycles (minimum)  
- **Data Retention**: 20 years (minimum)  

This information is based on the manufacturer's datasheet.

Partnumber Manufacturer Quantity Availability
HY29DL163TT-70,HY29DL163TT70 HYING 261 In Stock

Description and Introduction

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-70 is a flash memory chip manufactured by HYING. Here are the factual specifications from Ic-phoenix technical data files:

1. **Memory Type**: NOR Flash  
2. **Density**: 16Mbit (2M x 8-bit or 1M x 16-bit)  
3. **Supply Voltage**: 2.7V - 3.6V  
4. **Access Time**: 70ns  
5. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
6. **Package**: 48-pin TSOP (Thin Small Outline Package)  
7. **Interface**: Parallel (x8/x16)  
8. **Sector Architecture**: Uniform 64KB sectors  
9. **Endurance**: 100,000 program/erase cycles per sector  
10. **Data Retention**: 20 years  

No additional suggestions or guidance are provided.

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