HY29DL163TT-70Manufacturer: HY 16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| HY29DL163TT-70,HY29DL163TT70 | HY | 955 | In Stock |
Description and Introduction
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-70 is a 16M (2M x 8-bit / 1M x 16-bit) CMOS flash memory device manufactured by HY (Hynix). Key specifications include:  
- **Organization**:   - **Supply Voltage**: 2.7V–3.6V   - **Access Time**: 70 ns   - **Operating Current**:   - **Standby Current**: 1 µA (typical)   - **Sector Architecture**:   - **Endurance**: 100,000 program/erase cycles per sector   - **Data Retention**: 20 years   - **Package**: 48-pin TSOP (Type I)   - **Operating Temperature**: -40°C to +85°C   - **Interface**: Supports both x8 and x16 configurations with a byte# (BYTE) pin for mode selection.   This device is designed for high-performance, low-power applications requiring reliable non-volatile storage. |
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| Partnumber | Manufacturer | Quantity | Availability |
| HY29DL163TT-70,HY29DL163TT70 | HYING. | 179 | In Stock |
Description and Introduction
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-70 is a flash memory chip manufactured by HYING. Here are its key specifications:  
- **Memory Type**: NOR Flash   This information is based on the manufacturer's datasheet. |
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| Partnumber | Manufacturer | Quantity | Availability |
| HY29DL163TT-70,HY29DL163TT70 | HYING | 261 | In Stock |
Description and Introduction
16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL163TT-70 is a flash memory chip manufactured by HYING. Here are the factual specifications from Ic-phoenix technical data files:
1. **Memory Type**: NOR Flash   No additional suggestions or guidance are provided. |
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