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HY29DL162TT-70 from HY

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HY29DL162TT-70

Manufacturer: HY

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory

Partnumber Manufacturer Quantity Availability
HY29DL162TT-70,HY29DL162TT70 HY 2198 In Stock

Description and Introduction

16 Megabit (2M x 8/1M x16) Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory The HY29DL162TT-70 is a 16Mbit (2M x 8-bit / 1M x 16-bit) CMOS flash memory device manufactured by Hyundai (HY). Key specifications include:  

- **Organization**:  
  - 2,097,152 words × 8 bits  
  - 1,048,576 words × 16 bits  
- **Supply Voltage**: 2.7V–3.6V  
- **Access Time**: 70ns  
- **Operating Current**: 20mA (typical read), 30mA (typical program/erase)  
- **Standby Current**: 1µA (typical)  
- **Sector Architecture**:  
  - Sixteen 4Kword (8KB) sectors  
  - One 32Kword (64KB) sector  
  - Seven 64Kword (128KB) sectors  
- **Endurance**: 100,000 program/erase cycles per sector  
- **Data Retention**: 20 years  
- **Package**: 48-pin TSOP (Type I)  

The device supports both uniform and boot sector architectures and features a command-driven interface for programming and erasure.

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