HUFA76407DK8TManufacturer: FAI 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET?Power MOSFET | |||
| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| HUFA76407DK8T | FAI | 5000 | In Stock |
Description and Introduction
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET?Power MOSFET **Introduction to the HUFA76407DK8T Power MOSFET**
The **HUFA76407DK8T** from Fairchild Semiconductor is a high-performance N-channel power MOSFET designed for efficient power management in demanding applications. Featuring a low on-resistance (RDS(on)) and fast switching capabilities, this component is optimized for high-current, high-frequency operations such as DC-DC converters, motor control, and power supply circuits. Built with advanced trench technology, the HUFA76407DK8T ensures minimal conduction losses, enhancing energy efficiency in power systems. Its robust design supports a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of up to 30A, making it suitable for industrial and automotive applications where reliability is critical. The MOSFET is housed in a **TO-252 (DPAK)** package, offering a compact footprint while maintaining excellent thermal performance. Its lead-free and RoHS-compliant construction aligns with modern environmental standards. Engineers favor the HUFA76407DK8T for its balance of performance, durability, and cost-effectiveness, making it a versatile choice for power electronics designs requiring high efficiency and thermal stability. |
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Application Scenarios & Design Considerations
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET?Power MOSFET
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