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HUF76143S3S from 哈里斯,Intersil

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HUF76143S3S

Manufacturer: 哈里斯

75A/ 30V/ 0.0055 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs

Partnumber Manufacturer Quantity Availability
HUF76143S3S 哈里斯 4000 In Stock

Description and Introduction

75A/ 30V/ 0.0055 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs The **HUF76143S3S** from Intersil is a high-performance **P-channel MOSFET** designed for power management applications. This electronic component is engineered to deliver efficient switching and low power dissipation, making it suitable for a variety of industrial, automotive, and consumer electronics applications.  

With a **-30V drain-to-source voltage (VDS)** and a **-12A continuous drain current (ID)**, the HUF76143S3S offers robust performance in power regulation circuits. Its low **on-resistance (RDS(on))** ensures minimal conduction losses, enhancing energy efficiency in systems where power conservation is critical.  

The MOSFET features a **compact surface-mount (SO-8) package**, allowing for space-efficient PCB designs. Its **fast switching characteristics** make it ideal for high-frequency applications such as DC-DC converters, load switches, and battery management systems. Additionally, the device is designed with **enhanced thermal performance**, ensuring reliable operation under demanding conditions.  

Engineers and designers favor the HUF76143S3S for its **durability, efficiency, and versatility** in power control applications. Whether used in portable electronics or automotive power systems, this MOSFET provides a dependable solution for managing power distribution with precision and reliability.

Application Scenarios & Design Considerations

75A/ 30V/ 0.0055 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs
Partnumber Manufacturer Quantity Availability
HUF76143S3S FAIRCHILD 266 In Stock

Description and Introduction

75A/ 30V/ 0.0055 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs The HUF76143S3S is a Power MOSFET manufactured by FAIRCHILD. Here are its key specifications:

- **Type**: N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Continuous Drain Current (ID)**: 50A
- **Pulsed Drain Current (IDM)**: 200A
- **Power Dissipation (PD)**: 125W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 4.5mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 1V (min), 2V (max)
- **Package**: TO-263 (D2PAK)

It is designed for high-performance power switching applications.

Application Scenarios & Design Considerations

75A/ 30V/ 0.0055 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs

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