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HUF76132SK8 from INTERSIL

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HUF76132SK8

Manufacturer: INTERSIL, FSC, FAI

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Partnumber Manufacturer Quantity Availability
HUF76132SK8 INTERSIL, FSC, FAI 2378 In Stock

Description and Introduction

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET The **HUF76132SK8** from Fairchild Semiconductor is a high-performance N-channel MOSFET designed for power management applications. This component is built using advanced trench technology, offering low on-resistance (RDS(on)) and high switching efficiency, making it ideal for demanding circuits such as DC-DC converters, motor drivers, and load switches.  

With a drain-source voltage (VDSS) rating of 30V and a continuous drain current (ID) of up to 60A, the HUF76132SK8 delivers robust performance in high-current environments. Its low gate charge and fast switching characteristics minimize power losses, enhancing overall system efficiency. The device is housed in a TO-263 (D2PAK) package, ensuring effective thermal dissipation and mechanical stability in various operating conditions.  

Engineers favor this MOSFET for its reliability and ruggedness, particularly in automotive and industrial applications where high power density and thermal performance are critical. The HUF76132SK8 complies with industry standards, providing a dependable solution for modern power electronics designs.  

Fairchild Semiconductor’s commitment to quality ensures that the HUF76132SK8 meets stringent performance and durability requirements, making it a preferred choice for engineers seeking efficient power switching solutions.

Application Scenarios & Design Considerations

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Alternative Part Number

  • IRF7413ZTRPBF --: N-channel MOSFET in SO-8 with comparable voltage and on-resistance ratings, widely available and a common drop-in for power switching applications.
  • FDS6680A --: Logic-level N-channel MOSFET in SO-8 with similar current and RDS(on) characteristics, suitable replacement for low-side switching.
  • SI4430DY --: N-channel MOSFET in SO-8 offering comparable breakdown voltage and current handling, a practical alternative when the original is unavailable.
  • SI4436DY-T1-GE3 --: N-channel MOSFET in SO-8 offering similar on-resistance and thermal performance for switching applications.
  • Si4430BDY --: N-channel SO-8 MOSFET with comparable breakdown voltage and low on-resistance, offering a different series as a functional alternative.

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