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HUF76132SK8 from INTERSIL

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HUF76132SK8

Manufacturer: INTERSIL

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Partnumber Manufacturer Quantity Availability
HUF76132SK8 INTERSIL 400 In Stock

Description and Introduction

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET The part HUF76132SK8 is manufactured by INTERSIL. It is a power MOSFET designed for high-efficiency power management applications. Key specifications include:

- **Drain-Source Voltage (VDSS)**: 30V  
- **Continuous Drain Current (ID)**: 60A  
- **RDS(ON) (Max)**: 4.5mΩ at VGS = 10V  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Power Dissipation (PD)**: 125W  
- **Package**: TO-263 (D2PAK)  

This MOSFET is optimized for low on-resistance and fast switching performance, making it suitable for DC-DC converters, motor control, and other power applications.

Application Scenarios & Design Considerations

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Partnumber Manufacturer Quantity Availability
HUF76132SK8 FSC 1900 In Stock

Description and Introduction

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET The **HUF76132SK8** from Fairchild Semiconductor is a high-performance N-channel MOSFET designed for power management applications. This component is built using advanced trench technology, offering low on-resistance (RDS(on)) and high switching efficiency, making it ideal for demanding circuits such as DC-DC converters, motor drivers, and load switches.  

With a drain-source voltage (VDSS) rating of 30V and a continuous drain current (ID) of up to 60A, the HUF76132SK8 delivers robust performance in high-current environments. Its low gate charge and fast switching characteristics minimize power losses, enhancing overall system efficiency. The device is housed in a TO-263 (D2PAK) package, ensuring effective thermal dissipation and mechanical stability in various operating conditions.  

Engineers favor this MOSFET for its reliability and ruggedness, particularly in automotive and industrial applications where high power density and thermal performance are critical. The HUF76132SK8 complies with industry standards, providing a dependable solution for modern power electronics designs.  

Fairchild Semiconductor’s commitment to quality ensures that the HUF76132SK8 meets stringent performance and durability requirements, making it a preferred choice for engineers seeking efficient power switching solutions.

Application Scenarios & Design Considerations

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Partnumber Manufacturer Quantity Availability
HUF76132SK8 FAI 78 In Stock

Description and Introduction

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET The part HUF76132SK8 is manufactured by Fairchild Semiconductor (now part of ON Semiconductor). It is a PowerTrench MOSFET with the following key specifications:  

- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 60A (continuous at 25°C)  
- **RDS(ON) (Max):** 3.2mΩ at VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 125W  
- **Package:** TO-263 (D2PAK)  

This MOSFET is designed for high-efficiency power switching applications.  

(Source: Fairchild/ON Semiconductor datasheet for HUF76132SK8.)

Application Scenarios & Design Considerations

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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