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HUF75639S3ST from N/A

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HUF75639S3ST

Manufacturer: N/A

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
Partnumber Manufacturer Quantity Availability
HUF75639S3ST N/A 1900 In Stock

Description and Introduction

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs The part HUF75639S3ST is a Power MOSFET manufactured by N/A. Below are its specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 30V
- **Continuous Drain Current (ID)**: 75A
- **Pulsed Drain Current (IDM)**: 300A
- **Power Dissipation (PD)**: 125W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 3.9mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 1V (min) to 2.5V (max)
- **Total Gate Charge (Qg)**: 110nC (typ)
- **Operating Junction Temperature (TJ)**: -55°C to +175°C
- **Package**: TO-263 (D2PAK)

These are the factual specifications for the HUF75639S3ST MOSFET. No further suggestions or guidance are provided.

Application Scenarios & Design Considerations

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

Alternative Part Number

  • IRF540N --: Widely available N-channel MOSFET with comparable voltage and current ratings, commonly used as a drop-in substitute in switching applications.
  • STP60NF06 --: Similar 60V N-channel power MOSFET with low on-resistance, suitable replacement for power switching and motor drive circuits.
  • FQP50N06 --: 60V N-channel MOSFET in TO-220 package offering comparable current handling and RDS(on), a practical alternative for similar power designs.
  • IRFZ44N --: Widely available 55V/49A N-channel MOSFET with similar on-resistance, commonly used as an alternative in power switching circuits.
  • STP55NF06 --: 60V/50A N-channel MOSFET in TO-220 with comparable RDS(on) and gate charge, a practical substitute for the original device.

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