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HUF75631S3ST from Fairchild,Fairchild Semiconductor

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HUF75631S3ST

Manufacturer: Fairchild

100V N-Channel UltraFET Power MOSFET
Partnumber Manufacturer Quantity Availability
HUF75631S3ST Fairchild 1441 In Stock

Description and Introduction

100V N-Channel UltraFET Power MOSFET The HUF75631S3ST is a Power MOSFET manufactured by Fairchild Semiconductor. Here are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDS)**: 60V
- **Continuous Drain Current (ID)**: 75A
- **Pulsed Drain Current (IDM)**: 300A
- **Power Dissipation (PD)**: 125W
- **Gate-Source Voltage (VGS)**: ±20V
- **On-Resistance (RDS(on))**: 6.5mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 2V to 4V
- **Package**: TO-263 (D2PAK)
- **Operating Temperature Range**: -55°C to +175°C

This MOSFET is designed for high-efficiency power switching applications.

Application Scenarios & Design Considerations

100V N-Channel UltraFET Power MOSFET

Alternative Part Number

  • IRFZ44N --: Widely available N-channel MOSFET with comparable voltage and current ratings, suitable for similar switching applications.
  • STP55NF06 --: 60V N-channel MOSFET with low on-resistance, a common substitute for Fairchild power MOSFETs in switching circuits.
  • FQP50N06 --: 60V N-channel MOSFET from a different series with similar current capability, usable as a drop-in alternative in many designs.

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