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HN4A08J from TOSHIBA

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HN4A08J

Manufacturer: TOSHIBA

Transistor for low frequency small-signal amplification 2 in 1

Partnumber Manufacturer Quantity Availability
HN4A08J TOSHIBA 27000 In Stock

Description and Introduction

Transistor for low frequency small-signal amplification 2 in 1 The part **HN4A08J** is manufactured by **TOSHIBA**.  

Key specifications include:  
- **Type**: N-channel MOS FET (Power MOSFET)  
- **Maximum Drain-Source Voltage (VDSS)**: 60V  
- **Continuous Drain Current (ID)**: 40A  
- **Power Dissipation (PD)**: 50W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.008Ω (typical)  
- **Package**: TO-220AB  

This MOSFET is designed for high-power switching applications.  

(Note: Always verify datasheet details for exact specifications.)

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