IC Phoenix logo

Home ›  H  › H27 > HN3C10F

HN3C10F from TOSHIBA

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

HN3C10F

Manufacturer: TOSHIBA

RF 2-in-1 Hybrid Transistors

Partnumber Manufacturer Quantity Availability
HN3C10F TOSHIBA 14000 In Stock

Description and Introduction

RF 2-in-1 Hybrid Transistors The part HN3C10F is manufactured by **TOSHIBA**.  

Key specifications:  
- **Type**: N-channel MOSFET  
- **Maximum Drain-Source Voltage (VDSS)**: 100V  
- **Continuous Drain Current (ID)**: 3A  
- **Power Dissipation (PD)**: 30W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.6Ω (max) at VGS = 10V  
- **Package**: TO-220F (isolated type)  

For detailed datasheets, refer to TOSHIBA's official documentation.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips