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HN2S03FU from TOSHIBA

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16.113ms

HN2S03FU

Manufacturer: TOSHIBA

Small-signal Schottky barrier diode

Partnumber Manufacturer Quantity Availability
HN2S03FU TOSHIBA 3000 In Stock

Description and Introduction

Small-signal Schottky barrier diode The part **HN2S03FU** is manufactured by **TOSHIBA**.  

**Specifications:**  
- **Type:** Power MOSFET  
- **Configuration:** N-Channel  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 60A  
- **RDS(on) (Max):** 3.0mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 100W  
- **Package:** TO-220SIS  

This MOSFET is designed for high-efficiency power switching applications.  

(Note: Always verify datasheets for the latest specifications.)

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