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HN2S02FU from TOSHIBA

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HN2S02FU

Manufacturer: TOSHIBA

Small-signal Schottky barrier diode

Partnumber Manufacturer Quantity Availability
HN2S02FU TOSHIBA 38701 In Stock

Description and Introduction

Small-signal Schottky barrier diode The part **HN2S02FU** is manufactured by **TOSHIBA**.  

Key specifications:  
- **Type**: Power MOSFET  
- **Configuration**: N-channel  
- **Drain-Source Voltage (VDSS)**: 30V  
- **Continuous Drain Current (ID)**: 60A  
- **Power Dissipation (PD)**: 100W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 2.5mΩ (max) at VGS = 10V  
- **Package**: TO-220SIS  

This MOSFET is designed for high-efficiency power switching applications.  

(Source: TOSHIBA datasheet for HN2S02FU)

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