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HMBT8550

Sincerity Mocroelectronics - PNP EPITAXIAL PLANAR TRANSISTOR

Partnumber Manufacturer Quantity Availability
HMBT8550 12000 In Stock

Description and Introduction

Sincerity Mocroelectronics - PNP EPITAXIAL PLANAR TRANSISTOR The HMBT8550 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. Below are its key specifications:

- **Type**: NPN Bipolar Transistor  
- **Collector-Emitter Voltage (VCEO)**: 30 V  
- **Collector-Base Voltage (VCBO)**: 60 V  
- **Emitter-Base Voltage (VEBO)**: 5 V  
- **Collector Current (IC)**: 1 A (continuous)  
- **Power Dissipation (Ptot)**: 1 W  
- **DC Current Gain (hFE)**: 40 to 250 (at IC = 150 mA, VCE = 1 V)  
- **Transition Frequency (fT)**: 150 MHz  
- **Operating Temperature Range**: -55°C to +150°C  
- **Package**: SOT-23 (Surface Mount)  

These specifications are based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

Partnumber Manufacturer Quantity Availability
HMBT8550 华昕 1254 In Stock

Description and Introduction

Sincerity Mocroelectronics - PNP EPITAXIAL PLANAR TRANSISTOR The HMBT8550 is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by 华昕 (Huaxin). Key specifications include:  

- **Type**: NPN BJT  
- **Package**: SOT-23  
- **Collector-Base Voltage (VCB)**: 12V  
- **Collector-Emitter Voltage (VCE)**: 12V  
- **Emitter-Base Voltage (VEB)**: 3V  
- **Collector Current (IC)**: 100mA  
- **Power Dissipation (PD)**: 225mW  
- **Transition Frequency (fT)**: 8GHz  
- **Noise Figure (NF)**: 1.2dB (typical at 2GHz)  
- **DC Current Gain (hFE)**: 40–120  

These specifications are based on the manufacturer's datasheet.

Partnumber Manufacturer Quantity Availability
HMBT8550 崋昕 3000 In Stock

Description and Introduction

Sincerity Mocroelectronics - PNP EPITAXIAL PLANAR TRANSISTOR The HMBT8550 is a high-power NPN bipolar junction transistor (BJT) manufactured by 崋昕 (Huaxin). Below are its key specifications:  

- **Type**: NPN BJT  
- **Collector-Emitter Voltage (VCE)**: 60V  
- **Collector-Base Voltage (VCB)**: 80V  
- **Emitter-Base Voltage (VEB)**: 5V  
- **Collector Current (IC)**: 6A  
- **Power Dissipation (PD)**: 50W  
- **DC Current Gain (hFE)**: 40-320  
- **Transition Frequency (fT)**: 20MHz  
- **Package**: TO-220  

This transistor is commonly used in power amplification and switching applications.

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