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HMBT5551 from 华昕

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HMBT5551

Manufacturer: 华昕, XX

Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages )
Partnumber Manufacturer Quantity Availability
HMBT5551 华昕, XX 5530 In Stock

Description and Introduction

Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages ) The HMBT5551 is a high-performance NPN bipolar junction transistor (BJT) manufactured by **XX**. Below are its key specifications:  

- **Type:** NPN Transistor  
- **Collector-Emitter Voltage (VCE):** 160V  
- **Collector-Base Voltage (VCB):** 180V  
- **Emitter-Base Voltage (VEB):** 5V  
- **Collector Current (IC):** 600mA  
- **Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 30 to 120  
- **Transition Frequency (fT):** 100MHz  
- **Package:** TO-92  

These specifications are based on standard operating conditions. For exact performance under specific conditions, refer to the official datasheet from XX.

Application Scenarios & Design Considerations

Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR(for general purpose applications requiring high Breakdown Voltages )

Alternative Part Number

  • MMBT5551 --: Industry-standard NPN high-voltage transistor with the same 160V rating and SOT-23 package, widely available and a direct functional equivalent.
  • 2N5551 --: The original through-hole reference device for this transistor family; same electrical characteristics, useful when TO-92 package is acceptable.
  • PMBT5551 --: SOT-23 NPN 160V transistor from a major supplier, matching voltage and current ratings for direct drop-in replacement.

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