HM62W8511HCLJP-10

Partnumber	Manufacturer	Quantity	Availability
HM62W8511HCLJP-10 Manufacturer: HIT 4M High Speed SRAM (512-kword x 8-bit)
HM62W8511HCLJP-10,HM62W8511HCLJP10	HIT	6000	In Stock
Description and Introduction 4M High Speed SRAM (512-kword x 8-bit) The part HM62W8511HCLJP-10 is manufactured by HIT (Hynix Semiconductor Inc.). ### Key Specifications: - Type: DRAM (Dynamic Random-Access Memory) - Density: 512Mb - Organization: 8M words × 64 bits - Voltage: 3.3V - Speed: 10ns (100MHz) - Package: 86-pin TSOP (Thin Small Outline Package) - Operating Temperature: Commercial (0°C to +70°C) This part is typically used in memory modules for computing and embedded systems. (Source: Hynix Semiconductor datasheet for HM62W8511HCLJP-10.)
Application Scenarios & Design Considerations 4M High Speed SRAM (512-kword x 8-bit)
Alternative Part Number IS61WV5128BLL-10TLI --: 512Kx8 asynchronous SRAM with 10 ns access time, functionally equivalent to the HM62W8511HCLJP-10 and widely available from ISSI. CY7C1041CV33-10ZXI --: 256Kx16 low-power SRAM with 10 ns speed grade, comparable organization and timing suitable as a drop-in replacement in most designs. AS7C34098A-10TIN --: 256Kx16 fast asynchronous SRAM with 10 ns access time, offered as a direct second-source alternative for Hitachi-style SRAMs.

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HM62W8511HCLJP-10 from HIT