HM62W4100HJP-12

Partnumber	Manufacturer	Quantity	Availability
HM62W4100HJP-12 Manufacturer: HIT 4M High Speed SRAM (1-Mword x 4-bit)
HM62W4100HJP-12,HM62W4100HJP12	HIT	4130	In Stock
Description and Introduction 4M High Speed SRAM (1-Mword x 4-bit) The part HM62W4100HJP-12 is manufactured by HIT (Hyundai Electronics Industries Co., Ltd.). It is a 4Mx16-bit (64Mb) CMOS Synchronous DRAM (SDRAM) with a 3.3V operating voltage. Key specifications include: - Organization: 4M words × 16 bits - Speed: 12ns (83MHz) - Package: 54-pin TSOP-II - Operating Voltage: 3.3V ± 0.3V - Refresh Cycles: 4096 cycles/64ms - Burst Length: 1, 2, 4, 8, or full page - CAS Latency: 2 or 3 This SDRAM is designed for high-speed data transfer applications.
Application Scenarios & Design Considerations 4M High Speed SRAM (1-Mword x 4-bit)
Alternative Part Number IS61WV102416BLL-10TLI --: 1M x 16 asynchronous SRAM with 10 ns access time, functionally compatible with the 4Mbit SRAM and widely available from ISSI. CY7C1041G-10ZSXI --: 4Mbit (256K x 16) fast asynchronous SRAM with 10 ns speed grade, a common drop-in class replacement for Hitachi 4Mbit SRAMs. AS6C4016-55PIN --: 4Mbit low-power CMOS SRAM in 256K x 16 organization, pin-compatible alternative often used to replace legacy Hitachi SRAM parts.

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HM62W4100HJP-12 from HIT