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HM514800CLJ-8 from HITACHI

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HM514800CLJ-8

Manufacturer: HITACHI, HIT

524,288-word X 8-bit Dynamic Random Access Memory

Partnumber Manufacturer Quantity Availability
HM514800CLJ-8,HM514800CLJ8 HITACHI, HIT 1796 In Stock

Description and Introduction

524,288-word X 8-bit Dynamic Random Access Memory **Introduction to the HM514800CLJ-8 Electronic Component**  

The HM514800CLJ-8 is a high-performance dynamic random-access memory (DRAM) module designed for applications requiring fast data access and reliable performance. This component is built with advanced semiconductor technology, offering a balance of speed, power efficiency, and storage capacity.  

With a well-optimized architecture, the HM514800CLJ-8 is suitable for use in computing systems, embedded applications, and other electronic devices where efficient memory management is critical. Its design ensures stable operation under varying workloads, making it a dependable choice for both industrial and consumer electronics.  

Key features of this DRAM module include low latency, high bandwidth, and compatibility with standard memory interfaces. These characteristics make it an ideal solution for systems that demand quick data processing without excessive power consumption. Additionally, its robust construction ensures durability in demanding environments.  

Engineers and designers often select the HM514800CLJ-8 for its ability to enhance system performance while maintaining cost-effectiveness. Whether integrated into servers, networking equipment, or high-performance computing devices, this component provides a reliable foundation for memory-intensive operations.  

In summary, the HM514800CLJ-8 is a versatile and efficient DRAM solution, well-suited for modern electronic applications requiring high-speed data handling and dependable functionality.

Application Scenarios & Design Considerations

524,288-word X 8-bit Dynamic Random Access Memory

Alternative Part Number

  • AS4C1M8SA-8TC --: 1M x 8 asynchronous DRAM in the same 28-pin SOJ package with 80 ns access time, a direct functional replacement for the HM514800 series.
  • IS41C8105-8T --: 1M x 8 fast page mode DRAM with 80 ns speed grade and compatible pinout, widely used as a drop-in substitute for Hitachi 514800 parts.
  • MT4C1M8A1-8 --: 1M x 8 DRAM organized identically with 80 ns access time, suitable as an alternative when the original Hitachi device is unavailable.
  • AS4C1M8SA-8TCN --: 1M x 8-bit asynchronous SRAM in a 32-pin SOJ package with 70-85 ns access time, functionally equivalent to the HM514800 1M x 8 SRAM and widely used as a drop-in replacement.
  • IS61WV10248EDBLL-10TLI --: 1M x 8 high-speed asynchronous SRAM with compatible pinout and timing, suitable replacement for the Hitachi 1M x 8 SRAM in most designs.
  • CY7C1041G-10VXI --: 4Mbit (512K x 8) fast asynchronous SRAM with similar interface and access time; can substitute where density and timing tolerances allow, from a well-established SRAM family.

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