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HM5116400S-6 from HIT

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HM5116400S-6

Manufacturer: HIT, ELPIDA

4,194,304 - WORD X 4-BIT DYNAMIC RAM
Partnumber Manufacturer Quantity Availability
HM5116400S-6,HM5116400S6 HIT, ELPIDA 562700 In Stock

Description and Introduction

4,194,304 - WORD X 4-BIT DYNAMIC RAM The part HM5116400S-6 is a DRAM (Dynamic Random-Access Memory) chip manufactured by HIT (Hyundai Electronics Industries Co., Ltd.). Below are the specifications based on available data:

1. **Type**: DRAM (Dynamic RAM)  
2. **Density**: 16 Megabit (2M x 8-bit)  
3. **Organization**: 2,097,152 words × 8 bits  
4. **Voltage Supply**: 5V ±10%  
5. **Access Time**: 60 ns (nanoseconds)  
6. **Package**: 300 mil SOJ (Small Outline J-lead)  
7. **Operating Temperature**: 0°C to 70°C  
8. **Refresh Cycles**: 4,096 cycles every 64 ms  
9. **Interface**: Asynchronous  

This part was commonly used in older computer systems and industrial applications. HIT (Hyundai Electronics) later became part of Hynix Semiconductor, now known as SK Hynix.  

For exact datasheet details, refer to the original manufacturer documentation.

Application Scenarios & Design Considerations

4,194,304 - WORD X 4-BIT DYNAMIC RAM

Alternative Part Number

  • AS4C4M16SA-6TCN --: 4M x 16-bit asynchronous DRAM in the same 60 ns speed grade, pin-compatible TSOP package, and widely used as a drop-in replacement for legacy 64 Mbit EDO/FPM parts.
  • IS41LV16256-50T --: 4M x 16-bit EDO DRAM with comparable organization and speed, available in TSOP, and commonly substituted for Hitachi 64 Mbit DRAMs in older designs.
  • MT4C4M16A1TG-6 --: 4M x 16-bit FPM/EDO DRAM in the same density and 60 ns class, suitable as a functional replacement where timing and package match the original board layout.
  • MT4C4M16SA-6 --: Micron's 4M x 16-bit asynchronous DRAM with 60ns access time provides equivalent density and timing for legacy designs originally using the Elpida part.

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