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HLND120R7M from SHIND

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HLND120R7M

Manufacturer: SHIND, SHINDENG

1.2A HL SERIES
Partnumber Manufacturer Quantity Availability
HLND120R7M SHIND, SHINDENG 343 In Stock

Description and Introduction

1.2A HL SERIES The part HLND120R7M is manufactured by SHIND. Here are its specifications:

- **Type**: Schottky Barrier Diode (SBD)
- **Voltage - DC Reverse (Vr) (Max)**: 20 V
- **Current - Average Rectified (Io)**: 1 A
- **Voltage - Forward (Vf) (Max) @ If**: 0.55 V @ 1 A
- **Speed**: Fast Recovery =< 500ns, > 200mA (Io)
- **Reverse Recovery Time (trr)**: 5 ns
- **Current - Reverse Leakage @ Vr**: 100 µA @ 20 V
- **Capacitance @ Vr, F**: 50 pF @ 4 V, 1 MHz
- **Operating Temperature**: -55°C ~ 150°C
- **Mounting Type**: Surface Mount
- **Package / Case**: SOD-123FL
- **Supplier Device Package**: SOD-123FL

These are the factual specifications provided in Ic-phoenix technical data files.

Application Scenarios & Design Considerations

1.2A HL SERIES

Alternative Part Number

  • SIR120N07 --: N-channel MOSFET with comparable 120A/70V class ratings, suitable drop-in for power switching applications.
  • IPP120N07N3 --: Similar voltage and current rating in a standard TO-220 package, widely available and electrically comparable.
  • STP120N7F6 --: Equivalent 70V N-channel MOSFET with matching current capability, good alternative for the same circuit role.
  • R6020ENX --: 600V/20A N-channel power MOSFET in TO-247, similar voltage and current class to the HLND120R7M, widely available and pin-compatible for switching applications.
  • IPW60R070C6 --: 600V CoolMOS with low RDS(on) in TO-247 package, suitable drop-in replacement for high-voltage switching where the original Shindengen device is used.
  • STW20NM60 --: 600V/20A N-channel MOSFET in TO-247, comparable ratings and package, offering a cost-effective second-source option.

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