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HGTG40N60B3 from FSC,Fairchild Semiconductor

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15.137ms

HGTG40N60B3

Manufacturer: FSC

70A, 600V, UFS Series N-Channel IGBT

Partnumber Manufacturer Quantity Availability
HGTG40N60B3 ,HGTG40N60B3 FSC 5000 In Stock

Description and Introduction

70A, 600V, UFS Series N-Channel IGBT The **HGTG40N60B3** from Fairchild Semiconductor is a high-performance **N-channel IGBT (Insulated Gate Bipolar Transistor)** designed for power switching applications. With a voltage rating of **600V** and a continuous collector current of **80A**, this component is well-suited for demanding industrial and automotive systems, including motor drives, inverters, and power supplies.  

Featuring **low saturation voltage (VCE(sat))** and **fast switching speeds**, the HGTG40N60B3 ensures efficient power conversion while minimizing heat dissipation. Its rugged construction includes an **ultra-soft recovery anti-parallel diode**, reducing switching losses and improving overall reliability. The device also incorporates **short-circuit ruggedness**, making it resilient under fault conditions.  

Designed for ease of integration, the HGTG40N60B3 comes in a **TO-247 package**, providing robust thermal performance and mechanical stability. Engineers favor this IGBT for its balance of **high power density and durability**, making it a dependable choice for high-frequency switching applications.  

Fairchild Semiconductor’s commitment to quality ensures that the HGTG40N60B3 meets stringent industry standards, delivering consistent performance in demanding environments. Whether used in renewable energy systems or industrial automation, this IGBT offers a reliable solution for efficient power management.

Partnumber Manufacturer Quantity Availability
HGTG40N60B3 FAIRCHIL 20 In Stock

Description and Introduction

70A, 600V, UFS Series N-Channel IGBT The part **HGTG40N60B3** is manufactured by **FAIRCHILD**. Below are its key specifications:  

- **Type**: IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (VCES)**: 600V  
- **Current Rating (IC)**: 80A  
- **Power Dissipation (PD)**: 330W  
- **Gate-Emitter Voltage (VGE)**: ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat))**: 2.1V (typical at 40A)  
- **Switching Speed**: Fast switching with low losses  
- **Package**: TO-247  
- **Operating Temperature Range**: -55°C to +150°C  

This IGBT is designed for high-power switching applications such as motor drives, inverters, and power supplies.

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