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HGTG40N60A4 from FAIRCHIL,Fairchild Semiconductor

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HGTG40N60A4

Manufacturer: FAIRCHIL

600V, SMPS Series N-Channel IGBT

Partnumber Manufacturer Quantity Availability
HGTG40N60A4 FAIRCHIL 70 In Stock

Description and Introduction

600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications:

- **Voltage Rating (VCES):** 600V  
- **Current Rating (IC @25°C):** 80A  
- **Current Rating (IC @100°C):** 40A  
- **Maximum Power Dissipation (PD):** 330W  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 2.1V (typical)  
- **Turn-On Delay Time (td(on)):** 18ns (typical)  
- **Turn-Off Delay Time (td(off)):** 180ns (typical)  
- **Package Type:** TO-247  

This IGBT is designed for high-power switching applications such as motor drives, inverters, and power supplies.  

(Source: Fairchild Semiconductor datasheet for HGTG40N60A4.)

Partnumber Manufacturer Quantity Availability
HGTG40N60A4 HIT 400 In Stock

Description and Introduction

600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a power MOSFET manufactured by HIT (Hitachi). Below are its key specifications:  

- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 40A  
- **Power Dissipation (PD):** 330W  
- **Gate Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **On-Resistance (RDS(on)):** 0.09Ω (max)  
- **Package:** TO-247  
- **Type:** N-Channel IGBT  
- **Switching Characteristics:** Designed for high-speed switching applications  

These specifications are based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official documentation.

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