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HGTG20N60C3D from FAIRCHIL,Fairchild Semiconductor

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HGTG20N60C3D

Manufacturer: FAIRCHIL

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Partnumber Manufacturer Quantity Availability
HGTG20N60C3D FAIRCHIL 10 In Stock

Description and Introduction

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications from Ic-phoenix technical data files:

1. **Type**: N-Channel IGBT (Insulated Gate Bipolar Transistor)  
2. **Voltage Rating**:  
   - Collector-Emitter Voltage (VCES): 600V  
3. **Current Ratings**:  
   - Collector Current (IC): 40A (at 25°C)  
   - Collector Current (IC): 20A (at 100°C)  
4. **Power Dissipation**:  
   - Total Power Dissipation (PD): 200W (at 25°C)  
5. **Switching Characteristics**:  
   - Turn-On Delay Time (td(on)): 22ns (typical)  
   - Turn-Off Delay Time (td(off)): 150ns (typical)  
6. **Gate Characteristics**:  
   - Gate-Emitter Threshold Voltage (VGE(th)): 5.5V (typical)  
   - Gate-Emitter Voltage (VGE): ±20V (max)  
7. **Package**: TO-247 (3-pin)  

This information is based on Fairchild's datasheet for the HGTG20N60C3D.

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