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HGTG20N60B3 from FAIRCHIL,Fairchild Semiconductor

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HGTG20N60B3

Manufacturer: FAIRCHIL

40A/ 600V/ UFS Series N-Channel IGBTs

Partnumber Manufacturer Quantity Availability
HGTG20N60B3 FAIRCHIL 10 In Stock

Description and Introduction

40A/ 600V/ UFS Series N-Channel IGBTs The HGTG20N60B3 is a power MOSFET manufactured by Fairchild Semiconductor. Here are its key specifications:

- **Type**: N-Channel IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (VCES)**: 600V  
- **Current Rating (IC)**: 40A (at 25°C)  
- **Power Dissipation (PD)**: 200W  
- **Gate-Emitter Voltage (VGE)**: ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat))**: 2.1V (typical at IC = 20A)  
- **Switching Speed**: Fast switching with low conduction losses  
- **Package**: TO-247  
- **Operating Temperature Range**: -55°C to +150°C  

This IGBT is designed for high-efficiency power switching applications.

Partnumber Manufacturer Quantity Availability
HGTG20N60B3 FAIRCHID 2086 In Stock

Description and Introduction

40A/ 600V/ UFS Series N-Channel IGBTs The part **HGTG20N60B3** is manufactured by **Fairchild Semiconductor**.  

### Key Specifications:  
- **Type**: IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage Rating (VCES)**: 600V  
- **Current Rating (IC)**: 40A (at 25°C)  
- **Power Dissipation (PD)**: 200W  
- **Gate-Emitter Voltage (VGE)**: ±20V  
- **Switching Characteristics**:  
  - Turn-on Delay Time (td(on)): 18ns (typical)  
  - Turn-off Delay Time (td(off)): 110ns (typical)  
- **Package**: TO-247  

### Features:  
- Low VCE(sat) (saturation voltage)  
- Fast switching speed  
- High current capability  
- Robust and reliable for power applications  

This information is based on Fairchild's datasheet for the HGTG20N60B3.

Partnumber Manufacturer Quantity Availability
HGTG20N60B3 ,HGTG20N60B3 HAR 31 In Stock

Description and Introduction

40A/ 600V/ UFS Series N-Channel IGBTs The part **HGTG20N60B3** is manufactured by **HAR** (Hitachi). Here are its key specifications:

- **Type**: IGBT (Insulated Gate Bipolar Transistor)  
- **Voltage (VCES)**: 600V  
- **Current (IC)**: 40A  
- **Power Dissipation (PD)**: 200W  
- **Package**: TO-247  
- **Gate-Emitter Voltage (VGE)**: ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat))**: 2.1V (typical)  
- **Switching Speed**: Fast switching with low losses  
- **Applications**: Power switching in motor drives, inverters, and industrial applications  

These specifications are based on standard datasheet information. For exact performance under specific conditions, refer to the official datasheet.

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