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HGTG20N120C3D from ITS

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HGTG20N120C3D

Manufacturer: ITS

45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Partnumber Manufacturer Quantity Availability
HGTG20N120C3D ITS 218 In Stock

Description and Introduction

45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies.  

### Key Specifications:  
- **Voltage Rating (VCES):** 1200 V  
- **Current Rating (IC @ 25°C):** 40 A  
- **Current Rating (IC @ 100°C):** 20 A  
- **Maximum Power Dissipation (Ptot):** 330 W  
- **Gate-Emitter Voltage (VGE):** ±20 V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 2.1 V (typical)  
- **Switching Speed:** Fast switching with low losses  
- **Package:** TO-247-3  

This IGBT is designed for high-power switching applications such as motor drives, inverters, and industrial power systems.  

For exact datasheet details, refer to Infineon's official documentation.

Application Scenarios & Design Considerations

45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Alternative Part Number

  • IRG4PC50UD --: 1200V N-channel IGBT with integrated anti-parallel diode, similar current rating and TO-247 package, widely available and a common drop-in for HGTG-series devices.
  • FGA25N120ANTD --: 1200V NPT IGBT with co-packaged fast recovery diode, comparable 20-25A class and TO-247 package, suitable for induction heating and motor drive applications.
  • STGW30NC120HD --: 1200V IGBT with integrated diode in TO-247, slightly higher current capability but electrically compatible for most switching applications requiring a 1200V co-packaged IGBT.

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