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HGT1S7N60A4DS from FAI,Fairchild Semiconductor

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HGT1S7N60A4DS

Manufacturer: FAI

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Partnumber Manufacturer Quantity Availability
HGT1S7N60A4DS FAI 1500 In Stock

Description and Introduction

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The part **HGT1S7N60A4DS** is manufactured by **FAI (Fairchild Semiconductor)**. Below are the factual specifications from Ic-phoenix technical data files:  

- **Type**: N-Channel MOSFET  
- **Voltage Rating (VDSS)**: 600V  
- **Current Rating (ID)**: 1.7A  
- **Power Dissipation (PD)**: 50W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 4.5Ω (max) at VGS = 10V  
- **Package**: TO-92  
- **Application**: Switching applications  

This information is based on Fairchild Semiconductor's datasheet for the HGT1S7N60A4DS.

Application Scenarios & Design Considerations

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Alternative Part Number

  • IRG4BC30FDPBF --: 600V N-channel IGBT in TO-220 with integrated fast body diode, similar current rating and switching characteristics, drop-in replacement for the HGT1S7N60A4DS.
  • STGP7NC60HD --: 600V N-channel IGBT in TO-220 with fast recovery diode, comparable 7A class rating and switching speed, suitable alternative from a different series.
  • FGP10N60UNDF --: 600V N-channel IGBT in TO-220 with co-packaged diode, similar voltage and current class, widely available alternative with different naming.

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