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HGT1S3N60C3DS from HARRIS,Intersil

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HGT1S3N60C3DS

Manufacturer: HARRIS

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Partnumber Manufacturer Quantity Availability
HGT1S3N60C3DS HARRIS 100 In Stock

Description and Introduction

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The part **HGT1S3N60C3DS** is a semiconductor device manufactured by **HARRIS**. Below are its key specifications:

1. **Type**: N-Channel MOSFET  
2. **Voltage Rating**: 600V  
3. **Current Rating**: 1A  
4. **Package**: TO-92  
5. **Technology**: High Voltage MOSFET  
6. **Application**: Designed for high-voltage switching applications  

For detailed electrical characteristics and performance curves, refer to the official datasheet from HARRIS (now part of **Littelfuse** due to acquisitions).

Application Scenarios & Design Considerations

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Alternative Part Number

  • IRG4BC30FDPBF --: 600V N-channel IGBT in TO-220 with integrated fast recovery diode, similar current rating and switching characteristics, widely available and pin-compatible replacement.
  • FGA25N120ANTD --: 600V-class NPT IGBT with co-packaged diode in TO-220, higher current margin, suitable drop-in substitute for switching applications.
  • STGP10NC60KD --: 600V N-channel IGBT with integrated diode in TO-220, comparable voltage and current ratings, good alternative when the original Harris part is unavailable.

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