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HFS4N60 from SEMIHOW

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15.015ms

HFS4N60

Manufacturer: SEMIHOW

600V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
HFS4N60 SEMIHOW 12000 In Stock

Description and Introduction

600V N-Channel MOSFET The HFS4N60 is a MOSFET manufactured by SEMIHOW. Below are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDS)**: 600V
- **Continuous Drain Current (ID)**: 4A
- **Pulsed Drain Current (IDM)**: 16A
- **Power Dissipation (PD)**: 38W
- **Gate-Source Voltage (VGS)**: ±30V
- **On-Resistance (RDS(on))**: 2.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 2V to 4V
- **Input Capacitance (Ciss)**: 300pF (typ)
- **Output Capacitance (Coss)**: 30pF (typ)
- **Reverse Transfer Capacitance (Crss)**: 5pF (typ)
- **Turn-On Delay Time (td(on))**: 10ns (typ)
- **Turn-Off Delay Time (td(off))**: 35ns (typ)
- **Package**: TO-220F

These specifications are based on standard testing conditions. For detailed performance characteristics, refer to the official datasheet.

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