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HFP730 from SEMIHOW

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HFP730

Manufacturer: SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor

Partnumber Manufacturer Quantity Availability
HFP730 SEMIHOW 230 In Stock

Description and Introduction

N-Channel Enhancement Mode Field Effect Transistor The HFP730 is a high-frequency PNP transistor manufactured by SEMIHOW. Here are its key specifications:

- **Type**: PNP  
- **Material**: Silicon (Si)  
- **Maximum Collector-Emitter Voltage (VCEO)**: -30V  
- **Maximum Collector-Base Voltage (VCBO)**: -40V  
- **Maximum Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -3A  
- **Power Dissipation (PD)**: 30W  
- **Transition Frequency (fT)**: 30MHz  
- **Operating Temperature Range**: -55°C to +150°C  
- **Package**: TO-220  

These are the factual specifications as provided by SEMIHOW for the HFP730 transistor.

Application Scenarios & Design Considerations

N-Channel Enhancement Mode Field Effect Transistor

Alternative Part Number

  • IRF730PBF --: Industry-standard 400V N-channel MOSFET in the same voltage/current class, widely available and a common drop-in replacement for the HFP730.
  • STP4N60 --: 600V N-channel MOSFET with comparable on-resistance and package options, suitable for similar switching and power supply applications.
  • FQP4N60 --: 600V N-channel MOSFET in TO-220, offering similar ratings and a different series naming, making it an easy-to-source alternative.

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