IC Phoenix logo

Home ›  H  › H20 > HFP4N60

HFP4N60 from SEMIHOW

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

15.869ms

HFP4N60

Manufacturer: SEMIHOW

600V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
HFP4N60 SEMIHOW 50 In Stock

Description and Introduction

600V N-Channel MOSFET The HFP4N60 is a power MOSFET manufactured by SEMIHOW. Here are its key specifications:

- **Type**: N-channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 600V  
- **Continuous Drain Current (ID)**: 4A  
- **Pulsed Drain Current (IDM)**: 16A  
- **Power Dissipation (PD)**: 38W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 2.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 3V (min), 5V (max)  
- **Input Capacitance (Ciss)**: 300pF (max)  
- **Output Capacitance (Coss)**: 30pF (max)  
- **Reverse Transfer Capacitance (Crss)**: 10pF (max)  
- **Turn-On Delay Time (td(on))**: 10ns (max)  
- **Turn-Off Delay Time (td(off))**: 50ns (max)  
- **Package**: TO-220F  

These specifications are based on SEMIHOW's datasheet for the HFP4N60 MOSFET.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips