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HFP12N60S from SEMIHOW

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HFP12N60S

Manufacturer: SEMIHOW

600V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
HFP12N60S SEMIHOW 29 In Stock

Description and Introduction

600V N-Channel MOSFET The HFP12N60S is a MOSFET manufactured by SEMIHOW. Here are its key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (VDSS)**: 600V
- **Continuous Drain Current (ID)**: 12A
- **Pulsed Drain Current (IDM)**: 48A
- **Power Dissipation (PD)**: 125W
- **Gate-Source Voltage (VGS)**: ±30V
- **On-State Resistance (RDS(on))**: 0.45Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th))**: 3V (min), 5V (max)
- **Input Capacitance (Ciss)**: 1800pF (typ)
- **Output Capacitance (Coss)**: 300pF (typ)
- **Reverse Transfer Capacitance (Crss)**: 50pF (typ)
- **Turn-On Delay Time (td(on))**: 15ns (typ)
- **Rise Time (tr)**: 45ns (typ)
- **Turn-Off Delay Time (td(off))**: 60ns (typ)
- **Fall Time (tf)**: 25ns (typ)
- **Package**: TO-220F (Fully Insulated)  

These specifications are based on SEMIHOW's datasheet for the HFP12N60S MOSFET.

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