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Partnumber	Manufacturer	Quantity	Availability
HFP12N60S Manufacturer: SEMIHOW 600V N-Channel MOSFET
HFP12N60S	SEMIHOW	29	In Stock
Description and Introduction 600V N-Channel MOSFET The HFP12N60S is a MOSFET manufactured by SEMIHOW. Here are its key specifications: - Type: N-Channel MOSFET - Drain-Source Voltage (V_DSS): 600V - Continuous Drain Current (I_D): 12A - Pulsed Drain Current (I_DM): 48A - Power Dissipation (P_D): 125W - Gate-Source Voltage (V_GS): ±30V - On-State Resistance (R_DS(on)): 0.45Ω (max) at V_GS = 10V - Threshold Voltage (V_GS(th)): 3V (min), 5V (max) - Input Capacitance (C_iss): 1800pF (typ) - Output Capacitance (C_oss): 300pF (typ) - Reverse Transfer Capacitance (C_rss): 50pF (typ) - Turn-On Delay Time (t_d(on)): 15ns (typ) - Rise Time (t_r): 45ns (typ) - Turn-Off Delay Time (t_d(off)): 60ns (typ) - Fall Time (t_f): 25ns (typ) - Package: TO-220F (Fully Insulated) These specifications are based on SEMIHOW's datasheet for the HFP12N60S MOSFET.
Application Scenarios & Design Considerations 600V N-Channel MOSFET
Alternative Part Number STP12NM60N --: 600V 12A N-channel MOSFET in TO-220 with comparable RDS(on) and gate charge, widely available and a direct functional replacement for switching power supply use. IRFBC40 --: 600V 6.2A N-channel MOSFET in TO-220; lower current rating but same voltage class and package, suitable for lower-power designs needing a drop-in style substitute. FQP12N60C --: 600V 12A N-channel MOSFET in TO-220 with similar on-resistance and switching characteristics, a common cross-reference for 12N60 class devices.

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