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H7N1004FN from RENESAS

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H7N1004FN

Manufacturer: RENESAS

Silicon N-Channel MOS FET HigH-Speed Power Switching

Partnumber Manufacturer Quantity Availability
H7N1004FN RENESAS 5000 In Stock

Description and Introduction

Silicon N-Channel MOS FET HigH-Speed Power Switching The part H7N1004FN is manufactured by Renesas. It is a high-voltage, high-speed power MOSFET driver IC. Key specifications include:

- **Supply Voltage Range**: 10V to 20V  
- **Output Current**: ±4A (peak)  
- **Propagation Delay Time**: 50ns (typical)  
- **Rise/Fall Time**: 25ns (typical)  
- **Operating Temperature Range**: -40°C to +125°C  
- **Package**: SOP-8  

This IC is designed for driving power MOSFETs and IGBTs in high-frequency switching applications.  

(Source: Renesas datasheet for H7N1004FN)

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