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H35N03J from 华昕

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H35N03J

Manufacturer: 华昕

Sincerity Mocroelectronics - N-Channel Enhancement-Mode MOSFET (25V, 35A)

Partnumber Manufacturer Quantity Availability
H35N03J 华昕 20000 In Stock

Description and Introduction

Sincerity Mocroelectronics - N-Channel Enhancement-Mode MOSFET (25V, 35A) # Introduction to the H35N03J Electronic Component  

The H35N03J is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications in various electronic circuits. With a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of 35A, this component is well-suited for power management in DC-DC converters, motor control systems, and load switching applications.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the H35N03J helps minimize power losses and improve overall system efficiency. Its N-channel enhancement-mode design allows for easy integration into both low-side and high-side switching configurations. Additionally, the component is housed in a TO-252 (DPAK) package, providing a compact footprint while ensuring effective thermal dissipation.  

Engineers often select the H35N03J for its reliability and performance in demanding environments. Its robust construction and adherence to industry standards make it a practical choice for automotive, industrial, and consumer electronics applications. When designing circuits with this MOSFET, proper gate drive considerations and thermal management are essential to maximize performance and longevity.  

In summary, the H35N03J is a versatile and efficient power MOSFET, offering a balance of high current handling, low resistance, and compact packaging for modern electronic designs.

Partnumber Manufacturer Quantity Availability
H35N03J 3358 In Stock

Description and Introduction

Sincerity Mocroelectronics - N-Channel Enhancement-Mode MOSFET (25V, 35A) The part **H35N03J** is a power MOSFET transistor. Below are its key specifications:

- **Type**: N-Channel MOSFET  
- **Drain-Source Voltage (VDS)**: 30V  
- **Continuous Drain Current (ID)**: 35A  
- **Power Dissipation (PD)**: 75W  
- **Gate-Source Voltage (VGS)**: ±20V  
- **On-Resistance (RDS(on))**: 0.035Ω (max) at VGS = 10V  
- **Package**: TO-252 (DPAK)  

These specifications are based on standard datasheet values. For precise application details, refer to the official manufacturer documentation.

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