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HFA3127BZ from INTELS,Intersil

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HFA3127BZ

Manufacturer: INTELS

Ultra High Frequency Transistor Arrays

Partnumber Manufacturer Quantity Availability
HFA3127BZ INTELS 1497 In Stock

Description and Introduction

Ultra High Frequency Transistor Arrays The HFA3127BZ is a high-speed, dual common-emitter NPN bipolar transistor array manufactured by Intersil (now part of Renesas Electronics).  

**Key Specifications:**  
- **Configuration:** Dual NPN transistors in a common-emitter configuration.  
- **Package:** 8-pin SOIC (Small Outline Integrated Circuit).  
- **Collector-Emitter Voltage (VCEO):** 12V.  
- **Collector-Base Voltage (VCBO):** 15V.  
- **Emitter-Base Voltage (VEBO):** 3V.  
- **Collector Current (IC):** 50mA per transistor.  
- **Power Dissipation (PD):** 725mW (total for the package).  
- **Transition Frequency (fT):** 8GHz (typical).  
- **DC Current Gain (hFE):** 85 (minimum at IC = 5mA, VCE = 1V).  
- **Applications:** High-speed switching, RF amplifiers, and other high-frequency circuits.  

For exact electrical characteristics, refer to the official datasheet from Renesas Electronics.

Application Scenarios & Design Considerations

Ultra High Frequency Transistor Arrays
Partnumber Manufacturer Quantity Availability
HFA3127BZ INTERSIL 45 In Stock

Description and Introduction

Ultra High Frequency Transistor Arrays The **HFA3127BZ** from Intersil is a high-performance electronic component designed for applications requiring fast switching and low power consumption. This device is part of the **HFA series**, known for its high-speed bipolar transistors optimized for RF and microwave applications.  

Featuring a **dual NPN transistor configuration**, the HFA3127BZ offers excellent gain and bandwidth characteristics, making it suitable for use in amplifiers, mixers, and other high-frequency circuits. Its low noise and high linearity ensure reliable performance in demanding environments.  

Key specifications include a **transition frequency (fT) of up to 8 GHz**, ensuring rapid signal processing, and a low collector-emitter saturation voltage, which enhances efficiency. The component is housed in a **surface-mount package**, facilitating easy integration into modern PCB designs.  

Engineers often select the HFA3127BZ for its **consistent performance and durability**, particularly in telecommunications, radar systems, and test equipment. Its robust design ensures stability across varying operating conditions, making it a dependable choice for high-frequency applications.  

With its combination of speed, efficiency, and reliability, the HFA3127BZ remains a preferred solution for designers seeking high-performance bipolar transistors in advanced electronic systems.

Application Scenarios & Design Considerations

Ultra High Frequency Transistor Arrays

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