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HFA16TB120 from IR,International Rectifier

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HFA16TB120

Manufacturer: IR

1200V 16A HEXFRED Discrete Diode in a TO-220AC package

Partnumber Manufacturer Quantity Availability
HFA16TB120 IR 20 In Stock

Description and Introduction

1200V 16A HEXFRED Discrete Diode in a TO-220AC package The part HFA16TB120 is manufactured by International Rectifier (IR). It is a high-frequency IGBT (Insulated Gate Bipolar Transistor) module. Key specifications include:

- **Voltage Rating (VCES):** 1200V  
- **Current Rating (IC @25°C):** 16A  
- **Maximum Junction Temperature (Tj):** 150°C  
- **Switching Speed:** Designed for high-frequency applications  
- **Package Type:** TO-247 or similar module package  

For detailed datasheet specifications, refer to the official IR documentation.

Partnumber Manufacturer Quantity Availability
HFA16TB120 126 In Stock

Description and Introduction

1200V 16A HEXFRED Discrete Diode in a TO-220AC package The part **HFA16TB120** is a high-frequency IGBT (Insulated Gate Bipolar Transistor) module manufactured by **Hitachi**.  

### **Key Specifications:**  
- **Voltage Rating (Vces):** 1200V  
- **Current Rating (Ic):** 16A  
- **Configuration:** Dual IGBT (half-bridge)  
- **Package Type:** Module  
- **Switching Frequency:** Designed for high-frequency applications  
- **Applications:** Used in power electronics such as inverters, motor drives, and industrial power supplies  

For exact datasheet details, refer to the official Hitachi documentation.

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