HFA16TB120Manufacturer: IR 1200V 16A HEXFRED Discrete Diode in a TO-220AC package | |||
Partnumber | Manufacturer | Quantity | Availability |
---|---|---|---|
HFA16TB120 | IR | 20 | In Stock |
Description and Introduction
1200V 16A HEXFRED Discrete Diode in a TO-220AC package The part HFA16TB120 is manufactured by International Rectifier (IR). It is a high-frequency IGBT (Insulated Gate Bipolar Transistor) module. Key specifications include:
- **Voltage Rating (VCES):** 1200V   For detailed datasheet specifications, refer to the official IR documentation. |
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Partnumber | Manufacturer | Quantity | Availability |
HFA16TB120 | 126 | In Stock | |
Description and Introduction
1200V 16A HEXFRED Discrete Diode in a TO-220AC package The part **HFA16TB120** is a high-frequency IGBT (Insulated Gate Bipolar Transistor) module manufactured by **Hitachi**.  
### **Key Specifications:**   For exact datasheet details, refer to the official Hitachi documentation. |
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