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H01N60S from HI-SINCERITY

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H01N60S

Manufacturer: HI-SINCERITY

Sincerity Mocroelectronics - N-Channel Power Field Effect Transistor

Partnumber Manufacturer Quantity Availability
H01N60S HI-SINCERITY 40 In Stock

Description and Introduction

Sincerity Mocroelectronics - N-Channel Power Field Effect Transistor The manufacturer HI-SINCERITY produces the part **H01N60S**, which is a **Schottky diode** with the following specifications:  

- **Type**: Schottky Barrier Diode  
- **Package**: TO-220AB  
- **Maximum Average Forward Current (IF(AV))**: 60A  
- **Peak Forward Surge Current (IFSM)**: 600A  
- **Maximum Reverse Voltage (VR)**: 100V  
- **Forward Voltage Drop (VF)**: 0.85V (typical at 30A)  
- **Reverse Leakage Current (IR)**: 10mA (maximum at 100V)  
- **Operating Junction Temperature (TJ)**: -55°C to +150°C  
- **Storage Temperature Range (TSTG)**: -55°C to +150°C  

This diode is designed for high-efficiency rectification in power supplies, inverters, and other high-current applications.  

(Note: Always verify specifications with the latest datasheet from the manufacturer.)

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For immediate assistance, call us at +86 533 2716050 or email [email protected]

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